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Merck Chemicals

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Merck4LCDs & Emerging Technologies

Structuring Solutions

Structuring Solutions

Innovative etching pastes for display production

For its partners in the display manufacturing industry, Merck develops innovative, tailored structuring concepts that offer simplified, environmentally friendly processes and higher production speed.

Your advantages - Highly economical large-scale production and low material consumption

If semi-conducting, insulating, or antireflective layers need to be structured in flat-panel display production (e. g. in order to remove ITO areas for touch panels), alternative patterning methods such as photolithography, evaporation masks, or laser ablation methods have certain disadvantages: they are either expensive or may cause damage due to particle generation on the surface of the substrates. Merck's unique isishape HiperEtch® concept offers screen-printable and dispensable materials for the selective etching of various functional layers - allowing easy, efficient, and fast patterning.

Requiring only a simple four-step structuring process, Merck's isishape® structuring materials permit highly economic large-scale production using standard equipment for printing, etching, rinsing and drying. The isishape® concept makes low material consumption as well as fast structuring times possible and effectively controls paste spreading behavior. Moreover, the use of  environmentally friendly isishape® products allows easy cleaning without organic detergents, resulting in very low organic concentration in rinse water (Biological/Chemical Oxygen Demand BOD/COD).

Applications - The better alternative

isishape HiperEtch® products are able to selectively etch antireflective coatings, passivation layers, and transparent conductive materials for displays and related applications. The isishape® concept is particularly recommended for use in the production of new-generation touch panels, flexible displays, OLEDs, EL backlights, and others.

The technology - How does it work?

isishape® is able to etch layers of nearly all types of transparent conductive oxides (e.g. ITO, ZnO), antireflective or passivation layers or diffusion barriers (e.g. SiO2), semiconductors (e.g. a-Si, poly-Si) and metals (e.g. aluminum). The innovative isishape® concept enables a simple structuring process consisting of only four processing steps: printing of etching paste on substrate regions where material needs to be removed, heating up the substrate triggering the etching, rinsing in DI water to clean the substrate from removed layer material, and finally drying the substrate. isishape® materials have already proven their suitability under mass production conditions in various fields of applications targeting different etchable layer systems.

Would you like further information? Please contact us.

Further information:

© Merck KGaA, Darmstadt, Germany, 2012

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